 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| geometry process details principal device types 1n645 thru 1n649 cbrhd-02 series gross die per 4 inch wafer 18,000 process cpd04 general purpose rectifier 500ma glass passivated rectifier chip process glass passivated mesa die size 26 x 26 mils die thickness 8.5 mils anode bonding pad area 14 x 14 mils top side metalization ni/au - 5,000?/2,000? back side metalization ni/au - 5,000?/2,000? www.centralsemi.com r4 (22-march 2010)
process cpd04 typical electrical characteristics www.centralsemi.com r4 (22-march 2010) |
Price & Availability of CPD0410
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |